FQA28N15

Teknik Özellikler

Kılıf / Paket

TO-3P-3, SC-65-3

Gate Charge Qg Max Vgs

52nC @ 10V

Additional Feature

FAST SWITCHING

Continuous Drain Current Id

33A

Ambalaj

Tube

Transistor Element Material

SILICON

RoHS Durumu

ROHS3 Compliant

Drain To Source Breakdown Voltage

150V

Yayın Yılı

2013

Vgsth Max Id

4V @ 250μA

Power Dissipation

227W

JESD-609 Kodu

e3

Montaj Tipi

Through Hole

Seri

QFET®

Akım Değeri

33A

Vgs Max

±25V

Weight

6.401g

Reach Svhc

No SVHC

Radyasyon Dayanımı

No

Turn Off Delay Time

100 ns

Gate To Source Voltage Vgs

25V

Terminal Kaplaması

Tin (Sn)

Number Of Elements

1

Current Continuous Drain Id25

33A Tc

Input Capacitance Ciss Max Vds

1600pF @ 25V

ECCN Kodu

EAR99

Genişlik

5mm

Element Configuration

Single

Fabrika Tedarik Süresi

4 Weeks

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fet Type

N-Channel

Rise Time

180ns

Uzunluk

15.8mm

Yükseklik

20.1mm

Kurşunsuz

Lead Free

Power Dissipation Max

227W Tc

Montaj

Through Hole

Lifecycle Status

ACTIVE (Last Updated: 6 days ago)

Drive Voltage Max Rds On Min Rds On

10V