FQA160N08

Teknik Özellikler

Kılıf / Paket

TO-3P-3, SC-65-3

Ambalaj

Tube

Gate Charge Qg Max Vgs

290nC @ 10V

Continuous Drain Current Id

160A

RoHS Durumu

ROHS3 Compliant

Qualification Status

Not Qualified

Transistor Element Material

SILICON

Vgsth Max Id

4V @ 250μA

Drain To Source Breakdown Voltage

80V

Yayın Yılı

2000

Power Dissipation

375W

Montaj Tipi

Through Hole

JESD-609 Kodu

e3

Seri

QFET®

Akım Değeri

160A

Weight

6.401g

Vgs Max

±25V

Drainsource On Resistancemax

0.007Ohm

Turn Off Delay Time

260 ns

Gate To Source Voltage Vgs

25V

Terminal Kaplaması

Tin (Sn)

Number Of Elements

1

Current Continuous Drain Id25

160A Tc

Input Capacitance Ciss Max Vds

7900pF @ 25V

ECCN Kodu

EAR99

Element Configuration

Single

Genişlik

5mm

Parça Durumu

Active

Fabrika Tedarik Süresi

10 Weeks

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rise Time

970ns

Fet Type

N-Channel

Power Dissipation Max

375W Tc

Uzunluk

15.8mm

Yükseklik

18.9mm

Kurşunsuz

Lead Free

Lifecycle Status

ACTIVE (Last Updated: 6 days ago)

Montaj

Through Hole

Drive Voltage Max Rds On Min Rds On

10V