FQA13N80-F109

Teknik Özellikler

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Rds On Max Id Vgs

750m Ω @ 6.3A, 10V

Fall Time Typ

110 ns

Pulsed Drain Currentmax Idm

50.4A

Pin Sayısı

3

Turn On Delay Time

60 ns

Kurşunsuz Kodu

yes

Operating Mode

ENHANCEMENT MODE

Çalışma Sıcaklığı

-55°C~150°C TJ

Threshold Voltage

5V

Terminal Sayısı

3

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Parça Durumu

Active

Fabrika Tedarik Süresi

8 Weeks

Genişlik

5mm

Element Configuration

Single

Drive Voltage Max Rds On Min Rds On

10V

Lifecycle Status

ACTIVE (Last Updated: 18 hours ago)

Montaj

Through Hole

Power Dissipation Max

300W Tc

Uzunluk

15.8mm

Yükseklik

18.9mm

Kurşunsuz

Lead Free

Fet Type

N-Channel

Rise Time

150ns

Gate To Source Voltage Vgs

30V

Turn Off Delay Time

155 ns

Drainsource On Resistancemax

0.75Ohm

Input Capacitance Ciss Max Vds

3500pF @ 25V

Current Continuous Drain Id25

12.6A Tc

Number Of Elements

1

RoHS Durumu

ROHS3 Compliant

Transistor Element Material

SILICON

Qualification Status

Not Qualified

Ambalaj

Tube

Continuous Drain Current Id

12.6A

Gate Charge Qg Max Vgs

88nC @ 10V

Kılıf / Paket

TO-3P-3, SC-65-3