FQA13N50C-F109

Teknik Özellikler

Transistor Application

SWITCHING

Number Of Elements

1

Terminal Sayısı

3

Çalışma Sıcaklığı

-55°C~150°C TJ

Operating Mode

ENHANCEMENT MODE

Current Continuous Drain Id25

13.5A Tc

Kurşunsuz Kodu

yes

Input Capacitance Ciss Max Vds

2055pF @ 25V

Drainsource On Resistancemax

0.48Ohm

Pulsed Drain Currentmax Idm

54A

Ds Breakdown Voltagemin

500V

Rds On Max Id Vgs

480m Ω @ 6.75A, 10V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Jesd30 Code

R-PSFM-T3

Avalanche Energy Rating Eas

860 mJ

Fet Type

N-Channel

Vgsth Max Id

4V @ 250μA

Power Dissipation Max

218W Tc

Montaj Tipi

Through Hole

Montaj

Through Hole

Lifecycle Status

ACTIVE (Last Updated: 1 week ago)

Seri

QFET®

Vgs Max

±30V

Weight

6.401g

Drive Voltage Max Rds On Min Rds On

10V

Drain To Source Voltage Vdss

500V

Kılıf / Paket

TO-3P-3, SC-65-3

Gate Charge Qg Max Vgs

56nC @ 10V

Continuous Drain Current Id

13.5A

Element Configuration

Single

Ambalaj

Tube

Fabrika Tedarik Süresi

4 Weeks

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Transistor Element Material

SILICON

RoHS Durumu

ROHS3 Compliant