FQA11N90-F109

Teknik Özellikler

Lifecycle Status

ACTIVE (Last Updated: 16 hours ago)

Montaj

Through Hole

Montaj Tipi

Through Hole

Drive Voltage Max Rds On Min Rds On

10V

Seri

QFET®

Weight

6.401g

Vgs Max

±30V

Vgsth Max Id

5V @ 250μA

Rise Time

135ns

Fet Type

N-Channel

Drain To Source Breakdown Voltage

900V

Power Dissipation Max

300W Tc

Power Dissipation

300W

Kurşunsuz

Lead Free

Parça Durumu

Active

Fabrika Tedarik Süresi

4 Weeks

RoHS Durumu

ROHS3 Compliant

Qualification Status

Not Qualified

Transistor Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kılıf / Paket

TO-3P-3, SC-65-3

Element Configuration

Single

Ambalaj

Tube

Gate Charge Qg Max Vgs

94nC @ 10V

Continuous Drain Current Id

11.4A

Operating Mode

ENHANCEMENT MODE

Kurşunsuz Kodu

yes

Current Continuous Drain Id25

11.4A Tc

Input Capacitance Ciss Max Vds

3500pF @ 25V

Turn On Delay Time

65 ns

Number Of Elements

1

Transistor Application

SWITCHING

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Sayısı

3

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Turn Off Delay Time

165 ns

Rds On Max Id Vgs

960m Ω @ 5.7A, 10V

Gate To Source Voltage Vgs

30V

Fall Time Typ

90 ns