FQA11N90C

Teknik Özellikler

Rise Time

130ns

Fet Type

N-Channel

Drain To Source Breakdown Voltage

900V

Yayın Yılı

2007

Vgsth Max Id

5V @ 250μA

Kurşunsuz

Lead Free

Power Dissipation Max

300W Tc

Power Dissipation

300W

Montaj

Through Hole

Montaj Tipi

Through Hole

Seri

QFET®

Akım Değeri

11A

Vgs Max

±30V

Drive Voltage Max Rds On Min Rds On

10V

ECCN Kodu

EAR99

Kılıf / Paket

TO-3P-3, SC-65-3

Gate Charge Qg Max Vgs

80nC @ 10V

Continuous Drain Current Id

11A

Element Configuration

Single

Ambalaj

Tube

Parça Durumu

Obsolete

Qualification Status

Not Qualified

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Transistor Element Material

SILICON

RoHS Durumu

RoHS Compliant

Transistor Application

SWITCHING

Voltage Rated Dc

900V

Number Of Elements

1

Terminal Sayısı

3

Çalışma Sıcaklığı

-55°C~150°C TJ

Operating Mode

ENHANCEMENT MODE

Current Continuous Drain Id25

11A Tc

Input Capacitance Ciss Max Vds

3290pF @ 25V

Pin Sayısı

3

Pulsed Drain Currentmax Idm

44A

Fall Time Typ

85 ns

Rds On Max Id Vgs

1.1 Ω @ 5.5A, 10V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Turn Off Delay Time

130 ns