FQA10N80C-F109

Teknik Özellikler

Fabrika Tedarik Süresi

4 Weeks

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Transistor Element Material

SILICON

Qualification Status

Not Qualified

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

TO-3P-3, SC-65-3

Continuous Drain Current Id

10A

Gate Charge Qg Max Vgs

58nC @ 10V

Ambalaj

Tube

Element Configuration

Single

Genişlik

5mm

Montaj Tipi

Through Hole

Montaj

Through Hole

Lifecycle Status

ACTIVE (Last Updated: 16 hours ago)

Weight

6.401g

Vgs Max

±30V

Seri

QFET®

Reach Svhc

No SVHC

Drive Voltage Max Rds On Min Rds On

10V

Drain To Source Breakdown Voltage

800V

Rise Time

130ns

Fet Type

N-Channel

Vgsth Max Id

5V @ 250μA

Uzunluk

15.8mm

Yükseklik

18.9mm

Kurşunsuz

Lead Free

Power Dissipation

240W

Power Dissipation Max

240W Tc

Rds On Max Id Vgs

1.1 Ω @ 5A, 10V

Turn Off Delay Time

90 ns

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Avalanche Energy Rating Eas

920 mJ

Gate To Source Voltage Vgs

30V

Pin Sayısı

3

Pulsed Drain Currentmax Idm

40A

Fall Time Typ

80 ns

Current Continuous Drain Id25

10A Tc

Kurşunsuz Kodu

yes