FDZ3N513ZT

Teknik Özellikler

Power Dissipation

1W

Rise Time

1.9ns

Gate To Source Voltage Vgs

5.5V

Kılıf / Paket

4-UFBGA, WLCSP

Continuous Drain Current Id

1.1A

Operating Mode

DEPLETION MODE

Yayın Yılı

2016

Drain To Source Breakdown Voltage

30V

Fall Time Typ

2.7 ns

Number Of Elements

1

Nominal Vgs

700 mV

Additional Feature

ESD PROTECTION

Terminal Kaplaması

Tin/Silver/Copper (Sn/Ag/Cu)

Forward Current

1.1A

Turn Off Delay Time

9.6 ns

Montaj Tipi

Surface Mount

Pin Sayısı

4

Input Capacitance Ciss Max Vds

85pF @ 15V

Transistor Element Material

SILICON

Çalışma Sıcaklığı

-55°C~125°C TJ

Terminal Pozisyonu

BOTTOM

Genişlik

1mm

Terminal Formu

BALL

Gate Charge Qg Max Vgs

1nC @ 4.5V

Max Repetitive Reverse Voltage Vrrm

25V

Parça Durumu

Obsolete

Radyasyon Dayanımı

No

Threshold Voltage

700mV

Drainsource On Resistancemax

0.52Ohm

Lifecycle Status

LAST SHIPMENTS (Last Updated: 3 days ago)

JESD-609 Kodu

e1

Fet Type

N-Channel

ECCN Kodu

EAR99

Yükseklik

332μm

Montaj

Surface Mount

Feedback Capmax Crss

25 pF

Terminal Sayısı

4

Drive Voltage Max Rds On Min Rds On

3.2V 4.5V

Vgsth Max Id

1.5V @ 250μA

Weight

42mg