FDU6N25

Teknik Özellikler

Weight

539mg

Vgsth Max Id

5V @ 250μA

Pin Sayısı

3

Radyasyon Dayanımı

No

Ds Breakdown Voltagemin

250V

Vgs Max

±30V

Rise Time

60ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Operating Mode

ENHANCEMENT MODE

Power Dissipation Max

50W Tc

Ambalaj

Tube

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Rds On Max Id Vgs

1.1 Ω @ 2.2A, 10V

Input Capacitance Ciss Max Vds

250pF @ 25V

Element Configuration

Single

Yükseklik

7.57mm

HTS Kodu

8541.29.00.95

Montaj Tipi

Through Hole

Pulsed Drain Currentmax Idm

18A

Genişlik

2.5mm

JESD-609 Kodu

e3

Turn On Delay Time

10 ns

Lifecycle Status

ACTIVE (Last Updated: 14 hours ago)

Transistor Application

SWITCHING

Current Continuous Drain Id25

4.4A Tc

Terminal Sayısı

3

Gate To Source Voltage Vgs

30V

Fet Type

N-Channel

Parça Durumu

Active

Continuous Drain Current Id

4.4A

Drive Voltage Max Rds On Min Rds On

10V

Gate Charge Qg Max Vgs

6nC @ 10V

Turn Off Delay Time

7 ns

Drain To Source Voltage Vdss

250V

RoHS Durumu

ROHS3 Compliant

Yayın Yılı

2013

Montaj

Through Hole

Terminal Kaplaması

Tin (Sn)

Avalanche Energy Rating Eas

12 mJ