FDS6675

Teknik Özellikler

Nominal Vgs

-1.7 V

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Weight

130mg

Input Capacitance Ciss Max Vds

3000pF @ 15V

Turn Off Delay Time

50 ns

JESD-609 Kodu

e3

Terminal

SMD/SMT

Fet Type

P-Channel

Akım Değeri

-11A

Continuous Drain Current Id

11A

ECCN Kodu

EAR99

Gate To Source Voltage Vgs

20V

Fall Time Typ

100 ns

Current Continuous Drain Id25

11A Ta

RoHS Durumu

ROHS3 Compliant

Terminal Kaplaması

Tin (Sn)

Çalışma Sıcaklığı

-55°C~150°C TJ

Power Dissipation Max

2.5W Ta

Direnç

14mOhm

Transistor Element Material

SILICON

Threshold Voltage

-1.7V

Operating Mode

ENHANCEMENT MODE

Terminal Formu

GULL WING

Transistor Application

SWITCHING

Yayın Yılı

1999

Ambalaj

Tape & Reel (TR)

Radyasyon Dayanımı

No

Drain To Source Breakdown Voltage

-30V

Rds On Max Id Vgs

14m Ω @ 11A, 10V

Additional Feature

LOGIC LEVEL COMPATIBLE

Power Dissipation

2.5W

Vgs Max

±20V

Seri

PowerTrench®

Dual Supply Voltage

-30V

Kurşunsuz Kodu

yes

Kurşunsuz

Lead Free

Drain To Source Voltage Vdss

30V

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Montaj

Surface Mount