FDPF8N50NZF

Teknik Özellikler

Terminal Sayısı

3

Number Of Elements

1

Element Configuration

Single

Turn On Delay Time

17 ns

Fabrika Tedarik Süresi

9 Weeks

Montaj Tipi

Through Hole

Gate Charge Qg Max Vgs

18nC @ 10V

Drainsource On Resistancemax

1Ohm

Rise Time

34ns

Lifecycle Status

ACTIVE (Last Updated: 20 hours ago)

Vgsth Max Id

5V @ 250μA

Uzunluk

10.16mm

Drive Voltage Max Rds On Min Rds On

10V

Kurşunsuz Kodu

yes

Montaj

Through Hole

Kılıf / Paket

TO-220-3 Full Pack

Pin Sayısı

3

Rds On Max Id Vgs

1 Ω @ 3.5A, 10V

Drain To Source Breakdown Voltage

500V

Seri

UniFET-II™

Vgs Max

±25V

Power Dissipation

40W

Transistor Application

SWITCHING

Pulsed Drain Currentmax Idm

28A

Operating Mode

ENHANCEMENT MODE

Yayın Yılı

2010

Transistor Element Material

SILICON

Genişlik

4.7mm

Ambalaj

Tube

Radyasyon Dayanımı

No

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Kaplaması

Tin (Sn)

RoHS Durumu

ROHS3 Compliant

Yükseklik

15.87mm

Current Continuous Drain Id25

7A Tc

Power Dissipation Max

40W Tc

ECCN Kodu

EAR99

Continuous Drain Current Id

7A

Drain Currentmax Abs Id

7A

Fall Time Typ

27 ns