FDPF680N10T

Teknik Özellikler

Drive Voltage Max Rds On Min Rds On

10V

Uzunluk

10.36mm

Vgsth Max Id

4.5V @ 250μA

Lifecycle Status

ACTIVE (Last Updated: 6 days ago)

Drainsource On Resistancemax

0.068Ohm

Rise Time

19ns

Gate Charge Qg Max Vgs

17nC @ 10V

Montaj Tipi

Through Hole

Fabrika Tedarik Süresi

13 Weeks

Turn On Delay Time

13 ns

Element Configuration

Single

Number Of Elements

1

Terminal Sayısı

3

Power Dissipation

24W

Seri

PowerTrench®

Vgs Max

±20V

Drain To Source Breakdown Voltage

100V

Rds On Max Id Vgs

68m Ω @ 6A, 10V

Pin Sayısı

3

Montaj

Through Hole

Kılıf / Paket

TO-220-3 Full Pack

Kurşunsuz Kodu

yes

Power Dissipation Max

24W Tc

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

12A Tc

Yükseklik

16.07mm

Terminal Kaplaması

Tin (Sn)

Çalışma Sıcaklığı

-55°C~150°C TJ

Radyasyon Dayanımı

No

Ambalaj

Tube

Genişlik

4.9mm

Transistor Element Material

SILICON

Yayın Yılı

2013

Avalanche Energy Rating Eas

50.4 mJ

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

48A

Case Connection

ISOLATED

Fet Type

N-Channel

Nem Hassasiyeti (MSL)

1 (Unlimited)