FDPF5N50NZU

Teknik Özellikler

Uzunluk

10.16mm

Drive Voltage Max Rds On Min Rds On

10V

Vgsth Max Id

5V @ 250μA

Power Dissipation Max

30W Tc

Drainsource On Resistancemax

2Ohm

Çalışma Sıcaklığı

-55°C~150°C TJ

Rise Time

19ns

Terminal Kaplaması

TIN

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

3.9A Tc

Lifecycle Status

ACTIVE (Last Updated: 4 days ago)

Yükseklik

15.87mm

Fabrika Tedarik Süresi

9 Weeks

Radyasyon Dayanımı

No

Ambalaj

Tube

Genişlik

4.7mm

Turn On Delay Time

12 ns

Gate Charge Qg Max Vgs

12nC @ 10V

Montaj Tipi

Through Hole

Terminal Sayısı

3

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

Transistor Element Material

SILICON

Number Of Elements

1

Element Configuration

Single

Fet Type

N-Channel

Seri

UniFET-II™

Case Connection

ISOLATED

Vgs Max

±25V

Power Dissipation

30W

JESD-609 Kodu

e3

Input Capacitance Ciss Max Vds

485pF @ 25V

Turn Off Delay Time

31 ns

Nem Hassasiyeti (MSL)

1 (Unlimited)

Weight

2.27g

Parça Durumu

Active

Rds On Max Id Vgs

2 Ω @ 1.95A, 10V

Drain To Source Breakdown Voltage

500V

Pin Sayısı

3

Fall Time Typ

22 ns