FDPF2710T

Teknik Özellikler

Contact Plating

Tin

Fet Type

N-Channel

Kılıf / Paket

TO-220-3 Full Pack

Transistor Application

SWITCHING

Transistor Element Material

SILICON

Çalışma Sıcaklığı

-55°C~150°C TJ

Gate To Source Voltage Vgs

30V

Fall Time Typ

154 ns

Drive Voltage Max Rds On Min Rds On

10V

Turn On Delay Time

80 ns

Parça Durumu

Active

Weight

2.27g

Current Continuous Drain Id25

25A Tc

Rise Time

252ns

Fabrika Tedarik Süresi

8 Weeks

ECCN Kodu

EAR99

Threshold Voltage

3.9V

Rds On Max Id Vgs

42.5m Ω @ 25A, 10V

Ambalaj

Tube

Montaj Tipi

Through Hole

Yayın Yılı

2013

RoHS Durumu

ROHS3 Compliant

Reach Svhc

No SVHC

Power Dissipation

62.5W

Continuous Drain Current Id

25A

Nominal Vgs

3.9 V

Drain To Source Breakdown Voltage

250V

JESD-609 Kodu

e3

Vgsth Max Id

5V @ 250μA

Vgs Max

±30V

Operating Mode

ENHANCEMENT MODE

Uzunluk

10.36mm

Terminal Sayısı

3

Kurşunsuz

Lead Free

Genişlik

4.9mm

Input Capacitance Ciss Max Vds

7280pF @ 25V

Yükseklik

16.07mm

Element Configuration

Single

Power Dissipation Max

62.5W Tc

Number Of Elements

1