FDPF20N50T

Teknik Özellikler

Fall Time Typ

105 ns

Drive Voltage Max Rds On Min Rds On

10V

Parça Durumu

Active

Turn On Delay Time

95 ns

Current Continuous Drain Id25

20A Tc

Weight

2.27g

Rise Time

375ns

Fabrika Tedarik Süresi

9 Weeks

Pulsed Drain Currentmax Idm

80A

Akım Değeri

20A

Fet Type

N-Channel

Kılıf / Paket

TO-220-3 Full Pack

Terminal Kaplaması

Tin (Sn)

Transistor Application

SWITCHING

Transistor Element Material

SILICON

Çalışma Sıcaklığı

-55°C~150°C TJ

Gate To Source Voltage Vgs

30V

Power Dissipation

38.5W

Continuous Drain Current Id

20A

Drain To Source Breakdown Voltage

500V

JESD-609 Kodu

e3

ECCN Kodu

EAR99

Rds On Max Id Vgs

230m Ω @ 10A, 10V

Ambalaj

Tube

Montaj Tipi

Through Hole

Yayın Yılı

2013

RoHS Durumu

ROHS3 Compliant

Element Configuration

Single

Power Dissipation Max

38.5W Tc

Number Of Elements

1

Gate Charge Qg Max Vgs

59.5nC @ 10V

Vgsth Max Id

5V @ 250μA

Uzunluk

10.36mm

Operating Mode

ENHANCEMENT MODE

Vgs Max

±30V

Terminal Sayısı

3

Kurşunsuz

Lead Free

Voltage Rated Dc

500V

Genişlik

4.9mm

Input Capacitance Ciss Max Vds

3120pF @ 25V