FDPF20N50

Teknik Özellikler

Transistor Element Material

SILICON

Transistor Application

SWITCHING

Terminal Kaplaması

Tin (Sn)

Çalışma Sıcaklığı

-55°C~150°C TJ

Gate To Source Voltage Vgs

30V

Pulsed Drain Currentmax Idm

80A

Kılıf / Paket

TO-220-3 Full Pack

Fet Type

N-Channel

Turn On Delay Time

95 ns

Parça Durumu

Active

Fabrika Tedarik Süresi

6 Weeks

Rise Time

375ns

Weight

2.27g

Current Continuous Drain Id25

20A Tc

Qualification Status

Not Qualified

REACH Uyumluluk Kodu

not_compliant

Drive Voltage Max Rds On Min Rds On

10V

Fall Time Typ

105 ns

Yayın Yılı

2013

Montaj Tipi

Through Hole

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Ambalaj

Tube

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

RoHS Durumu

ROHS3 Compliant

Rds On Max Id Vgs

230m Ω @ 10A, 10V

ECCN Kodu

EAR99

Drain To Source Breakdown Voltage

500V

JESD-609 Kodu

e3

Power Dissipation

38.5W

Additional Feature

AVALANCHE RATED

Continuous Drain Current Id

20A

Terminal Sayısı

3

Vgs Max

±30V

Operating Mode

ENHANCEMENT MODE

Uzunluk

10.36mm

Yükseklik

16.07mm

Input Capacitance Ciss Max Vds

3120pF @ 25V

Genişlik

4.9mm

Kurşunsuz

Lead Free

Vgsth Max Id

5V @ 250μA