FDPF16N50

Teknik Özellikler

Transistor Element Material

SILICON

Transistor Application

SWITCHING

Çalışma Sıcaklığı

-55°C~150°C TJ

Gate To Source Voltage Vgs

30V

Pulsed Drain Currentmax Idm

64A

Kılıf / Paket

TO-220-3 Full Pack

Contact Plating

Tin

Fet Type

N-Channel

Turn On Delay Time

40 ns

Parça Durumu

Active

Fabrika Tedarik Süresi

4 Weeks

Rise Time

150ns

Weight

2.27g

Current Continuous Drain Id25

16A Tc

Qualification Status

Not Qualified

REACH Uyumluluk Kodu

not_compliant

Drive Voltage Max Rds On Min Rds On

10V

Fall Time Typ

80 ns

Yayın Yılı

2004

Montaj Tipi

Through Hole

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Ambalaj

Tube

Reach Svhc

No SVHC

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

RoHS Durumu

ROHS3 Compliant

Rds On Max Id Vgs

380m Ω @ 8A, 10V

Threshold Voltage

5V

ECCN Kodu

EAR99

Drain To Source Breakdown Voltage

500V

JESD-609 Kodu

e3

Avalanche Energy Rating Eas

780 mJ

Power Dissipation

38.5W

Continuous Drain Current Id

16A

Terminal Sayısı

3

Uzunluk

10.16mm

Operating Mode

ENHANCEMENT MODE

Vgs Max

±30V

Input Capacitance Ciss Max Vds

1945pF @ 25V

Yükseklik

15.87mm

Genişlik

4.7mm