FDPF10N60NZ

Teknik Özellikler

Weight

2.27g

Current Continuous Drain Id25

10A Tc

Rise Time

50ns

Fabrika Tedarik Süresi

4 Weeks

Turn On Delay Time

25 ns

Parça Durumu

Active

Fall Time Typ

50 ns

Drive Voltage Max Rds On Min Rds On

10V

Çalışma Sıcaklığı

-55°C~150°C TJ

Gate To Source Voltage Vgs

25V

Terminal Kaplaması

Tin (Sn)

Transistor Application

SWITCHING

Transistor Element Material

SILICON

Fet Type

N-Channel

Kılıf / Paket

TO-220-3 Full Pack

Pulsed Drain Currentmax Idm

40A

JESD-609 Kodu

e3

Drain To Source Breakdown Voltage

600V

Continuous Drain Current Id

10A

Power Dissipation

38W

Avalanche Energy Rating Eas

550 mJ

RoHS Durumu

ROHS3 Compliant

Drainsource On Resistancemax

0.75Ohm

Reach Svhc

No SVHC

Ambalaj

Tube

Montaj Tipi

Through Hole

Yayın Yılı

2013

ECCN Kodu

EAR99

Threshold Voltage

5V

Rds On Max Id Vgs

750m Ω @ 5A, 10V

Number Of Elements

1

Gate Charge Qg Max Vgs

30nC @ 10V

Power Dissipation Max

38W Tc

Element Configuration

Single

Genişlik

4.9mm

Yükseklik

16.07mm

Input Capacitance Ciss Max Vds

1475pF @ 25V

Uzunluk

10.36mm

Operating Mode

ENHANCEMENT MODE

Vgs Max

±25V