FDP8N50NZ

Teknik Özellikler

Çalışma Sıcaklığı

-55°C~150°C TJ

Gate To Source Voltage Vgs

25V

Transistor Element Material

SILICON

Terminal Kaplaması

Tin (Sn)

Drain To Source Voltage Vdss

500V

Transistor Application

SWITCHING

Fet Type

N-Channel

Kılıf / Paket

TO-220-3

Rise Time

34ns

Fabrika Tedarik Süresi

6 Weeks

Current Continuous Drain Id25

8A Tc

Weight

1.8g

Parça Durumu

Active

Turn On Delay Time

17 ns

Drive Voltage Max Rds On Min Rds On

10V

Fall Time Typ

27 ns

Qualification Status

Not Qualified

RoHS Durumu

ROHS3 Compliant

Drainsource On Resistancemax

0.85Ohm

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Montaj Tipi

Through Hole

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Drain Currentmax Abs Id

8A

Yayın Yılı

2010

Ambalaj

Tube

Rds On Max Id Vgs

850m Ω @ 4A, 10V

ECCN Kodu

EAR99

JESD-609 Kodu

e3

Continuous Drain Current Id

8A

Power Dissipation

130W

Yükseklik

9.4mm

Input Capacitance Ciss Max Vds

735pF @ 25V

Genişlik

4.83mm

Vgs Max

±25V

Operating Mode

ENHANCEMENT MODE

Uzunluk

10.67mm

Terminal Sayısı

3

Vgsth Max Id

5V @ 250μA

Gate Charge Qg Max Vgs

18nC @ 10V

Number Of Elements

1