FDP8874

Teknik Özellikler

Akım Değeri

121A

Kılıf / Paket

TO-220-3

Fet Type

N-Channel

Transistor Application

SWITCHING

Terminal Kaplaması

Tin (Sn)

Transistor Element Material

SILICON

Çalışma Sıcaklığı

-55°C~175°C TJ

Gate To Source Voltage Vgs

20V

Fall Time Typ

31 ns

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Parça Durumu

Active

Turn On Delay Time

10 ns

Current Continuous Drain Id25

16A Ta 114A Tc

Weight

1.8g

Fabrika Tedarik Süresi

10 Weeks

Rise Time

128ns

ECCN Kodu

EAR99

Rds On Max Id Vgs

5.3m Ω @ 40A, 10V

Ambalaj

Tube

Yayın Yılı

2004

Drain Currentmax Abs Id

80A

Montaj Tipi

Through Hole

RoHS Durumu

ROHS3 Compliant

Drainsource On Resistancemax

0.0066Ohm

Power Dissipation

110W

Continuous Drain Current Id

114A

Drain To Source Breakdown Voltage

30V

JESD-609 Kodu

e3

Vgsth Max Id

2.5V @ 250μA

Terminal Sayısı

3

Vgs Max

±20V

Operating Mode

ENHANCEMENT MODE

Uzunluk

10.67mm

Voltage Rated Dc

30V

Genişlik

4.83mm

Kurşunsuz

Lead Free

Input Capacitance Ciss Max Vds

3130pF @ 15V

Yükseklik

9.4mm

Element Configuration

Single

Power Dissipation Max

110W Tc