FDP7N50

Teknik Özellikler

ECCN Kodu

EAR99

Rds On Max Id Vgs

900m Ω @ 3.5A, 10V

Ambalaj

Tube

Drain Currentmax Abs Id

7A

Yayın Yılı

2004

Montaj Tipi

Through Hole

Drainsource On Resistancemax

0.9Ohm

RoHS Durumu

ROHS3 Compliant

Avalanche Energy Rating Eas

270 mJ

Power Dissipation

89W

Continuous Drain Current Id

7A

Drain To Source Breakdown Voltage

500V

JESD-609 Kodu

e3

Pulsed Drain Currentmax Idm

28A

Kılıf / Paket

TO-220-3

Fet Type

N-Channel

Transistor Application

SWITCHING

Terminal Kaplaması

Tin (Sn)

Transistor Element Material

SILICON

Gate To Source Voltage Vgs

30V

Çalışma Sıcaklığı

-55°C~150°C TJ

Fall Time Typ

35 ns

Drive Voltage Max Rds On Min Rds On

10V

Turn On Delay Time

6 ns

Parça Durumu

Active

Weight

1.8g

Current Continuous Drain Id25

7A Tc

Fabrika Tedarik Süresi

5 Weeks

Rise Time

55ns

Radyasyon Dayanımı

No

Jedec95 Code

TO-220AB

Turn Off Delay Time

25 ns

Kurşunsuz Kodu

yes

Lifecycle Status

ACTIVE (Last Updated: 3 days ago)

Montaj

Through Hole

Seri

UniFET™

Pin Sayısı

3

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgsth Max Id

5V @ 250μA

Terminal Sayısı

3