FDP6030BL

Teknik Özellikler

Transistor Application

SWITCHING

Terminal Kaplaması

Tin (Sn)

Transistor Element Material

SILICON

Gate To Source Voltage Vgs

20V

Çalışma Sıcaklığı

-65°C~175°C TJ

Akım Değeri

40A

Kılıf / Paket

TO-220-3

Fet Type

N-Channel

Parça Durumu

Active

Turn On Delay Time

9 ns

Weight

1.8g

Current Continuous Drain Id25

40A Tc

Fabrika Tedarik Süresi

10 Weeks

Rise Time

11ns

Fall Time Typ

8 ns

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Ambalaj

Tube

Yayın Yılı

2000

Montaj Tipi

Through Hole

RoHS Durumu

ROHS3 Compliant

ECCN Kodu

EAR99

Rds On Max Id Vgs

18m Ω @ 20A, 10V

Drain To Source Breakdown Voltage

30V

JESD-609 Kodu

e3

Power Dissipation

60W

Continuous Drain Current Id

40A

Terminal Sayısı

3

Uzunluk

10.67mm

Operating Mode

ENHANCEMENT MODE

Vgs Max

±20V

Genişlik

4.83mm

Voltage Rated Dc

30V

Kurşunsuz

Lead Free

Input Capacitance Ciss Max Vds

1160pF @ 15V

Yükseklik

9.4mm

Vgsth Max Id

3V @ 250μA

Power Dissipation Max

60W Tc

Number Of Elements

1

Gate Charge Qg Max Vgs

17nC @ 5V

Element Configuration

Single