FDP5N60NZ

Teknik Özellikler

Input Capacitance Ciss Max Vds

600pF @ 25V

Yükseklik

16.3mm

Genişlik

4.7mm

Terminal Sayısı

3

Uzunluk

10.67mm

Operating Mode

ENHANCEMENT MODE

Vgs Max

±25V

Vgsth Max Id

5V @ 250μA

Gate Charge Qg Max Vgs

13nC @ 10V

Number Of Elements

1

Power Dissipation Max

100W Tc

Element Configuration

Single

Kurşunsuz Kodu

yes

Lifecycle Status

ACTIVE (Last Updated: 3 days ago)

Turn Off Delay Time

35 ns

Jedec95 Code

TO-220AB

Pin Sayısı

3

Nem Hassasiyeti (MSL)

1 (Unlimited)

Seri

UniFET-II™

Montaj

Through Hole

Çalışma Sıcaklığı

-55°C~150°C TJ

Gate To Source Voltage Vgs

25V

Transistor Element Material

SILICON

Transistor Application

SWITCHING

Terminal Kaplaması

Tin (Sn)

Kılıf / Paket

TO-220-3

Fet Type

N-Channel

Fabrika Tedarik Süresi

5 Weeks

Rise Time

20ns

Weight

1.8g

Current Continuous Drain Id25

4.5A Tc

Turn On Delay Time

15 ns

Parça Durumu

Active

Drive Voltage Max Rds On Min Rds On

10V

Fall Time Typ

20 ns

Qualification Status

Not Qualified

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

RoHS Durumu

ROHS3 Compliant

Drainsource On Resistancemax

2Ohm

Yayın Yılı

2013