FDP39N20

Teknik Özellikler

Fall Time Typ

150 ns

Element Configuration

Single

Drive Voltage Max Rds On Min Rds On

10V

Current Continuous Drain Id25

39A Tc

Weight

1.8g

Number Of Elements

1

Jesd30 Code

R-PSFM-T3

Gate Charge Qg Max Vgs

49nC @ 10V

Fabrika Tedarik Süresi

4 Weeks

Rise Time

160ns

Power Dissipation Max

251W Tc

Parça Durumu

Active

Turn On Delay Time

30 ns

Kılıf / Paket

TO-220-3

Fet Type

N-Channel

Vgsth Max Id

5V @ 250μA

Gate To Source Voltage Vgs

30V

Çalışma Sıcaklığı

-55°C~150°C TJ

Input Capacitance Ciss Max Vds

2130pF @ 25V

Transistor Application

SWITCHING

Terminal Kaplaması

Tin (Sn)

Terminal Sayısı

3

Transistor Element Material

SILICON

Operating Mode

ENHANCEMENT MODE

Vgs Max

±30V

Additional Feature

FAST SWITCHING

Montaj

Through Hole

Continuous Drain Current Id

39A

Avalanche Energy Rating Eas

860 mJ

Power Dissipation

251W

JESD-609 Kodu

e3

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drain To Source Breakdown Voltage

200V

Seri

UniFET™

Jedec95 Code

TO-220AB

ECCN Kodu

EAR99

Radyasyon Dayanımı

No

Rds On Max Id Vgs

66m Ω @ 19.5A, 10V

Turn Off Delay Time

150 ns

Lifecycle Status

ACTIVE (Last Updated: 3 days ago)