FDP24N40

Teknik Özellikler

Transistor Application

SWITCHING

Terminal Kaplaması

Tin (Sn)

Transistor Element Material

SILICON

Çalışma Sıcaklığı

-55°C~150°C TJ

Gate To Source Voltage Vgs

30V

Pulsed Drain Currentmax Idm

96A

Kılıf / Paket

TO-220-3

Fet Type

N-Channel

Parça Durumu

Active

Turn On Delay Time

40 ns

Current Continuous Drain Id25

24A Tc

Weight

1.8g

Fabrika Tedarik Süresi

6 Weeks

Rise Time

90ns

Qualification Status

Not Qualified

Fall Time Typ

65 ns

Drive Voltage Max Rds On Min Rds On

10V

Ambalaj

Tube

Yayın Yılı

2013

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Montaj Tipi

Through Hole

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

RoHS Durumu

ROHS3 Compliant

ECCN Kodu

EAR99

Rds On Max Id Vgs

175m Ω @ 12A, 10V

Drain To Source Breakdown Voltage

400V

JESD-609 Kodu

e3

Power Dissipation

227W

Continuous Drain Current Id

24A

Terminal Sayısı

3

Vgs Max

±30V

Uzunluk

10.1mm

Operating Mode

ENHANCEMENT MODE

Genişlik

4.7mm

Kurşunsuz

Lead Free

Input Capacitance Ciss Max Vds

3020pF @ 25V

Yükseklik

15.38mm

Vgsth Max Id

5V @ 250μA

Power Dissipation Max

227W Tc

Number Of Elements

1