FDP22N50N

Teknik Özellikler

JESD-609 Kodu

e3

Drain To Source Breakdown Voltage

500V

Continuous Drain Current Id

22A

Power Dissipation

312.5W

RoHS Durumu

ROHS3 Compliant

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Montaj Tipi

Through Hole

Yayın Yılı

2004

Ambalaj

Tube

Rds On Max Id Vgs

220m Ω @ 11A, 10V

ECCN Kodu

EAR99

Rise Time

50ns

Fabrika Tedarik Süresi

5 Weeks

Current Continuous Drain Id25

22A Tc

Weight

1.8g

Turn On Delay Time

22 ns

Parça Durumu

Active

Drive Voltage Max Rds On Min Rds On

10V

Fall Time Typ

35 ns

Qualification Status

Not Qualified

Gate To Source Voltage Vgs

30V

Çalışma Sıcaklığı

-55°C~150°C TJ

Transistor Element Material

SILICON

Terminal Kaplaması

Tin (Sn)

Transistor Application

SWITCHING

Fet Type

N-Channel

Kılıf / Paket

TO-220-3

Pulsed Drain Currentmax Idm

88A

Pin Sayısı

3

Nem Hassasiyeti (MSL)

1 (Unlimited)

Seri

UniFET™

Montaj

Through Hole

Kurşunsuz Kodu

yes

Lifecycle Status

ACTIVE (Last Updated: 2 days ago)

Turn Off Delay Time

48 ns

Direnç

185mOhm

Jedec95 Code

TO-220AB

Gate Charge Qg Max Vgs

65nC @ 10V

Number Of Elements

1