FDP20N50F

Teknik Özellikler

Parça Durumu

Active

Turn On Delay Time

45 ns

Power Dissipation Max

250W Tc

Number Of Elements

1

Current Continuous Drain Id25

20A Tc

Weight

1.8g

Rise Time

120ns

Fabrika Tedarik Süresi

6 Weeks

Gate Charge Qg Max Vgs

65nC @ 10V

Qualification Status

Not Qualified

Fall Time Typ

60 ns

Drive Voltage Max Rds On Min Rds On

10V

Element Configuration

Single

Terminal Kaplaması

Tin (Sn)

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

Vgs Max

±30V

Terminal Sayısı

3

Transistor Element Material

SILICON

Gate To Source Voltage Vgs

30V

Çalışma Sıcaklığı

-55°C~150°C TJ

Input Capacitance Ciss Max Vds

3390pF @ 25V

Pulsed Drain Currentmax Idm

80A

Vgsth Max Id

5V @ 250μA

Fet Type

N-Channel

Kılıf / Paket

TO-220-3

Drain To Source Breakdown Voltage

500V

Seri

UniFET™

Pin Sayısı

3

Nem Hassasiyeti (MSL)

1 (Unlimited)

JESD-609 Kodu

e3

Power Dissipation

250W

Continuous Drain Current Id

20A

Montaj

Through Hole

Ambalaj

Tube

Montaj Tipi

Through Hole

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Yayın Yılı

2004

Turn Off Delay Time

100 ns

Lifecycle Status

ACTIVE (Last Updated: 2 days ago)