FDP20N50

Teknik Özellikler

Vgsth Max Id

5V @ 250μA

Input Capacitance Ciss Max Vds

3120pF @ 25V

Yükseklik

9.4mm

Genişlik

4.7mm

Kurşunsuz

Lead Free

Terminal Sayısı

3

Uzunluk

10.1mm

Operating Mode

ENHANCEMENT MODE

Vgs Max

±30V

Element Configuration

Single

Gate Charge Qg Max Vgs

59.5nC @ 10V

Number Of Elements

1

Power Dissipation Max

250W Tc

Jedec95 Code

TO-220AB

Radyasyon Dayanımı

No

Kurşunsuz Kodu

yes

Lifecycle Status

ACTIVE (Last Updated: 2 days ago)

Turn Off Delay Time

100 ns

Direnç

230MOhm

Montaj

Through Hole

Pin Sayısı

3

Nem Hassasiyeti (MSL)

1 (Unlimited)

Seri

UniFET™

Kılıf / Paket

TO-220-3

Contact Plating

Tin

Fet Type

N-Channel

Pulsed Drain Currentmax Idm

80A

Gate To Source Voltage Vgs

30V

Çalışma Sıcaklığı

-55°C~150°C TJ

Transistor Element Material

SILICON

Transistor Application

SWITCHING

Drive Voltage Max Rds On Min Rds On

10V

Fall Time Typ

105 ns

Fabrika Tedarik Süresi

9 Weeks

Rise Time

375ns

Current Continuous Drain Id25

20A Tc

Weight

1.8g

Parça Durumu

Active

Turn On Delay Time

95 ns

Rds On Max Id Vgs

230m Ω @ 10A, 10V