FDP16AN08A0

Teknik Özellikler

Drive Voltage Max Rds On Min Rds On

6V 10V

Fall Time Typ

30 ns

Parça Durumu

Active

Turn On Delay Time

8 ns

Rise Time

82ns

Fabrika Tedarik Süresi

9 Weeks

Current Continuous Drain Id25

9A Ta 58A Tc

Weight

1.8g

Fet Type

N-Channel

Contact Plating

Tin

Kılıf / Paket

TO-220-3

Akım Değeri

58A

Transistor Element Material

SILICON

Transistor Application

SWITCHING

Çalışma Sıcaklığı

-55°C~175°C TJ

Gate To Source Voltage Vgs

20V

Power Dissipation

135W

Continuous Drain Current Id

9A

Drain To Source Breakdown Voltage

75V

JESD-609 Kodu

e3

Rds On Max Id Vgs

16m Ω @ 58A, 10V

ECCN Kodu

EAR99

Montaj Tipi

Through Hole

Drain Currentmax Abs Id

9A

Yayın Yılı

2013

Ambalaj

Tube

RoHS Durumu

ROHS3 Compliant

Element Configuration

Single

Power Dissipation Max

135W Tc

Gate Charge Qg Max Vgs

42nC @ 10V

Number Of Elements

1

Vgsth Max Id

4V @ 250μA

Vgs Max

±20V

Operating Mode

ENHANCEMENT MODE

Uzunluk

10.67mm

Terminal Sayısı

3

Yükseklik

9.4mm

Input Capacitance Ciss Max Vds

1857pF @ 25V

Kurşunsuz

Lead Free

Voltage Rated Dc

75V