FDP12N60NZ

Teknik Özellikler

Genişlik

4.83mm

Yükseklik

16.51mm

Input Capacitance Ciss Max Vds

1676pF @ 25V

Terminal Sayısı

3

Uzunluk

10.67mm

Operating Mode

ENHANCEMENT MODE

Vgs Max

±30V

Vgsth Max Id

5V @ 250μA

Number Of Elements

1

Gate Charge Qg Max Vgs

34nC @ 10V

Power Dissipation Max

240W Tc

Element Configuration

Single

Turn Off Delay Time

80 ns

Kurşunsuz Kodu

yes

Lifecycle Status

ACTIVE (Last Updated: 2 days ago)

Jedec95 Code

TO-220AB

Radyasyon Dayanımı

No

Pin Sayısı

3

Nem Hassasiyeti (MSL)

1 (Unlimited)

Seri

UniFET-II™

Montaj

Through Hole

Çalışma Sıcaklığı

-55°C~150°C TJ

Gate To Source Voltage Vgs

30V

Transistor Application

SWITCHING

Transistor Element Material

SILICON

Kılıf / Paket

TO-220-3

Fet Type

N-Channel

Contact Plating

Tin

Pulsed Drain Currentmax Idm

48A

Weight

1.8g

Current Continuous Drain Id25

12A Tc

Fabrika Tedarik Süresi

8 Weeks

Rise Time

50ns

Turn On Delay Time

25 ns

Parça Durumu

Active

Fall Time Typ

60 ns

Drive Voltage Max Rds On Min Rds On

10V

Reach Svhc

No SVHC

RoHS Durumu

ROHS3 Compliant

Drainsource On Resistancemax

0.65Ohm