FDP12N50

Teknik Özellikler

Montaj Tipi

Through Hole

Yayın Yılı

2013

Ambalaj

Tube

Lifecycle Status

ACTIVE (Last Updated: 1 week ago)

RoHS Durumu

ROHS3 Compliant

Kurşunsuz Kodu

yes

Direnç

650MOhm

Turn Off Delay Time

45 ns

Radyasyon Dayanımı

No

Rds On Max Id Vgs

650m Ω @ 6A, 10V

ECCN Kodu

EAR99

Jedec95 Code

TO-220AB

Seri

UniFET™

Drain To Source Breakdown Voltage

500V

Nem Hassasiyeti (MSL)

1 (Unlimited)

JESD-609 Kodu

e3

Avalanche Energy Rating Eas

456 mJ

Power Dissipation

165W

Continuous Drain Current Id

11.5A

Montaj

Through Hole

Operating Mode

ENHANCEMENT MODE

Vgs Max

±30V

Terminal Sayısı

3

Transistor Element Material

SILICON

Terminal Kaplaması

Tin (Sn)

Transistor Application

SWITCHING

Input Capacitance Ciss Max Vds

1315pF @ 25V

Kurşunsuz

Lead Free

Çalışma Sıcaklığı

-55°C~150°C TJ

Gate To Source Voltage Vgs

30V

Vgsth Max Id

5V @ 250μA

Pulsed Drain Currentmax Idm

46A

Fet Type

N-Channel

Kılıf / Paket

TO-220-3

Parça Durumu

Active

Turn On Delay Time

24 ns

Power Dissipation Max

165W Tc

Rise Time

50ns

Jesd30 Code

R-PSFM-T3

Gate Charge Qg Max Vgs

30nC @ 10V