FDP047AN08A0

Teknik Özellikler

Fet Type

N-Channel

Contact Plating

Tin

Kılıf / Paket

TO-220-3

Akım Değeri

80A

Çalışma Sıcaklığı

-55°C~175°C TJ

Gate To Source Voltage Vgs

20V

Transistor Element Material

SILICON

Transistor Application

SWITCHING

Drive Voltage Max Rds On Min Rds On

6V 10V

Fall Time Typ

45 ns

Rise Time

88ns

Current Continuous Drain Id25

15A Tc

Weight

1.8g

Parça Durumu

Not For New Designs

Turn On Delay Time

18 ns

Rds On Max Id Vgs

4.7m Ω @ 80A, 10V

ECCN Kodu

EAR99

RoHS Durumu

ROHS3 Compliant

Reach Svhc

No SVHC

Montaj Tipi

Through Hole

Ambalaj

Tube

Continuous Drain Current Id

80A

Power Dissipation

310W

Avalanche Energy Rating Eas

475 mJ

JESD-609 Kodu

e3

Drain To Source Breakdown Voltage

75V

Vgsth Max Id

4V @ 250μA

Input Capacitance Ciss Max Vds

6600pF @ 25V

Yükseklik

9.4mm

Kurşunsuz

Lead Free

Voltage Rated Dc

75V

Genişlik

4.83mm

Vgs Max

±20V

Operating Mode

ENHANCEMENT MODE

Uzunluk

10.67mm

Terminal Sayısı

3

Element Configuration

Single

Gate Charge Qg Max Vgs

138nC @ 10V

Number Of Elements

1

Power Dissipation Max

310W Tc