FDP038AN06A0

Teknik Özellikler

Drive Voltage Max Rds On Min Rds On

6V 10V

Fall Time Typ

60 ns

Fabrika Tedarik Süresi

9 Weeks

Rise Time

144ns

Weight

1.8g

Current Continuous Drain Id25

17A Ta 80A Tc

Turn On Delay Time

17 ns

Parça Durumu

Active

Kılıf / Paket

TO-220-3

Contact Plating

Tin

Fet Type

N-Channel

Akım Değeri

80A

Çalışma Sıcaklığı

-55°C~175°C TJ

Gate To Source Voltage Vgs

20V

Transistor Element Material

SILICON

Transistor Application

SWITCHING

Continuous Drain Current Id

80A

Power Dissipation

310W

Avalanche Energy Rating Eas

625 mJ

JESD-609 Kodu

e3

Drain To Source Breakdown Voltage

60V

Rds On Max Id Vgs

3.8m Ω @ 80A, 10V

Threshold Voltage

4V

ECCN Kodu

EAR99

Reach Svhc

No SVHC

RoHS Durumu

ROHS3 Compliant

Yayın Yılı

2013

Montaj Tipi

Through Hole

Ambalaj

Tube

Element Configuration

Single

Gate Charge Qg Max Vgs

124nC @ 10V

Number Of Elements

1

Power Dissipation Max

310W Tc

Vgsth Max Id

4V @ 250μA

Yükseklik

9.65mm

Input Capacitance Ciss Max Vds

6400pF @ 25V

Genişlik

4.83mm

Voltage Rated Dc

60V

Kurşunsuz

Lead Free

Terminal Sayısı

3