FDN360P

Teknik Özellikler

Terminal Pozisyonu

DUAL

Gate To Source Voltage Vgs

20V

Çalışma Sıcaklığı

-55°C~150°C TJ

Transistor Element Material

SILICON

Transistor Application

SWITCHING

Drain To Source Voltage Vdss

30V

Contact Plating

Tin

Fet Type

P-Channel

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Akım Değeri

-2A

Rise Time

13ns

Fabrika Tedarik Süresi

10 Weeks

Weight

30mg

Current Continuous Drain Id25

2A Ta

Parça Durumu

Active

Turn On Delay Time

6 ns

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Fall Time Typ

6 ns

Dual Supply Voltage

-30V

RoHS Durumu

ROHS3 Compliant

Reach Svhc

No SVHC

Montaj Tipi

Surface Mount

Drain Currentmax Abs Id

2A

Yayın Yılı

2003

Ambalaj

Tape & Reel (TR)

Threshold Voltage

20V

Rds On Max Id Vgs

80m Ω @ 2A, 10V

ECCN Kodu

EAR99

JESD-609 Kodu

e3

Drain To Source Breakdown Voltage

-30V

Continuous Drain Current Id

2A

Additional Feature

LOGIC LEVEL COMPATIBLE

Power Dissipation

500mW

Yükseklik

1.22mm

Input Capacitance Ciss Max Vds

298pF @ 15V

Kurşunsuz

Lead Free

Genişlik

1.4mm

Voltage Rated Dc

-30V

Vgs Max

±20V

Operating Mode

ENHANCEMENT MODE