FDN357N

Teknik Özellikler

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Fet Type

N-Channel

Akım Değeri

1.9A

Transistor Element Material

SILICON

Transistor Application

SWITCHING

Terminal Kaplaması

Tin (Sn)

Min Breakdown Voltage

30V

Terminal Pozisyonu

DUAL

Gate To Source Voltage Vgs

20V

Çalışma Sıcaklığı

-55°C~150°C TJ

Dual Supply Voltage

30V

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Fall Time Typ

12 ns

Turn On Delay Time

5 ns

Parça Durumu

Active

Fabrika Tedarik Süresi

10 Weeks

Rise Time

12ns

Current Continuous Drain Id25

1.9A Ta

Weight

30mg

Rds On Max Id Vgs

60m Ω @ 2.2A, 10V

Threshold Voltage

1.6V

ECCN Kodu

EAR99

Yayın Yılı

1998

Montaj Tipi

Surface Mount

Ambalaj

Tape & Reel (TR)

Reach Svhc

No SVHC

RoHS Durumu

ROHS3 Compliant

Power Dissipation

500mW

Additional Feature

LOGIC LEVEL COMPATIBLE

Nominal Vgs

1.6 V

Continuous Drain Current Id

1.9A

Drain To Source Breakdown Voltage

30V

JESD-609 Kodu

e3

Vgsth Max Id

2V @ 250μA

Terminal Sayısı

3

Uzunluk

2.92mm

Operating Mode

ENHANCEMENT MODE

Vgs Max

±20V

Input Capacitance Ciss Max Vds

235pF @ 10V

Yükseklik

940μm