FDMS86320

Teknik Özellikler

Kılıf / Paket

8-PowerTDFN

Fet Type

N-Channel

Contact Plating

Tin

Pulsed Drain Currentmax Idm

50A

Terminal Pozisyonu

DUAL

Çalışma Sıcaklığı

-55°C~150°C TJ

Gate To Source Voltage Vgs

20V

Transistor Element Material

SILICON

Transistor Application

SWITCHING

Drive Voltage Max Rds On Min Rds On

8V 10V

Fall Time Typ

5 ns

Jesd30 Code

R-PDSO-F5

Fabrika Tedarik Süresi

8 Weeks

Rise Time

8ns

Current Continuous Drain Id25

10.5A Ta 22A Tc

Weight

74mg

Parça Durumu

Active

Turn On Delay Time

15 ns

Rds On Max Id Vgs

11.7m Ω @ 10.5A, 10V

ECCN Kodu

EAR99

RoHS Durumu

ROHS3 Compliant

Drain Currentmax Abs Id

22A

Montaj Tipi

Surface Mount

Ambalaj

Tape & Reel (TR)

Continuous Drain Current Id

10.5A

Avalanche Energy Rating Eas

60 mJ

Power Dissipation

69W

JESD-609 Kodu

e3

Drain To Source Breakdown Voltage

80V

Vgsth Max Id

4.5V @ 250μA

Yükseklik

1.05mm

Input Capacitance Ciss Max Vds

2640pF @ 40V

Genişlik

6mm

Terminal Sayısı

5

Vgs Max

±20V

Operating Mode

ENHANCEMENT MODE

Uzunluk

5mm

Element Configuration

Single

Gate Charge Qg Max Vgs

41nC @ 10V

Number Of Elements

1