FDMS86300

Teknik Özellikler

Terminal Pozisyonu

DUAL

Gate To Source Voltage Vgs

20V

Çalışma Sıcaklığı

-55°C~150°C TJ

Transistor Element Material

SILICON

Transistor Application

SWITCHING

Fet Type

N-Channel

Contact Plating

Tin

Kılıf / Paket

8-PowerTDFN

Pulsed Drain Currentmax Idm

120A

Rise Time

26ns

Fabrika Tedarik Süresi

7 Weeks

Current Continuous Drain Id25

19A Ta 80A Tc

Weight

68.1mg

Parça Durumu

Active

Turn On Delay Time

31 ns

Drive Voltage Max Rds On Min Rds On

8V 10V

Fall Time Typ

9 ns

RoHS Durumu

ROHS3 Compliant

Drainsource On Resistancemax

0.0039Ohm

Reach Svhc

No SVHC

Montaj Tipi

Surface Mount

Drain Currentmax Abs Id

19A

Yayın Yılı

2010

Ambalaj

Cut Tape (CT)

Threshold Voltage

3.4V

Rds On Max Id Vgs

3.9m Ω @ 19A, 10V

ECCN Kodu

EAR99

JESD-609 Kodu

e3

Drain To Source Breakdown Voltage

80V

Continuous Drain Current Id

42A

Nominal Vgs

3.4 V

Avalanche Energy Rating Eas

252 mJ

Power Dissipation

104W

Input Capacitance Ciss Max Vds

7082pF @ 40V

Yükseklik

1.05mm

Genişlik

6mm

Vgs Max

±20V

Operating Mode

ENHANCEMENT MODE

Uzunluk

5mm

Terminal Sayısı

8