FDMS6681Z

Teknik Özellikler

Element Configuration

Single

Genişlik

6mm

ECCN Kodu

EAR99

Nem Hassasiyeti (MSL)

1 (Unlimited)

Max Junction Temperature Tj

150°C

Fabrika Tedarik Süresi

10 Weeks

Parça Durumu

Active

Uzunluk

5mm

Yükseklik

1.1mm

Kurşunsuz

Lead Free

Power Dissipation Max

2.5W Ta 73W Tc

Fet Type

P-Channel

Rise Time

38ns

Feedback Capmax Crss

2020 pF

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Montaj

Surface Mount

Lifecycle Status

ACTIVE (Last Updated: 4 days ago)

Pin Sayısı

8

Fall Time Typ

197 ns

Jesd30 Code

R-PDSO-N5

Rds On Max Id Vgs

3.2m Ω @ 22.1A, 10V

Terminal Sayısı

5

Çalışma Sıcaklığı

-55°C~150°C TJ

Threshold Voltage

-1.7V

Transistor Application

SWITCHING

Direnç

3.2MOhm

Turn On Delay Time

15 ns

Case Connection

DRAIN

Operating Mode

ENHANCEMENT MODE

Kurşunsuz Kodu

yes

Gate Charge Qg Max Vgs

241nC @ 10V

Continuous Drain Current Id

-21.1A

Ambalaj

Tape & Reel (TR)

Kılıf / Paket

8-PowerTDFN

Transistor Element Material

SILICON

RoHS Durumu

ROHS3 Compliant

Power Dissipation

2.5W

Drain To Source Breakdown Voltage

-30V

Yayın Yılı

2017

Number Of Channels

1