FDMS3672

Teknik Özellikler

Transistor Element Material

SILICON

RoHS Durumu

ROHS3 Compliant

Gerilim

100V

Continuous Drain Current Id

7.4A

Gate Charge Qg Max Vgs

44nC @ 10V

Ambalaj

Tape & Reel (TR)

Configuration

SINGLE WITH BUILT-IN DIODE

Kılıf / Paket

8-PowerWDFN

Vgs Max

±20V

Seri

UltraFET™

Akım Değeri

22A

Montaj Tipi

Surface Mount

JESD-609 Kodu

e4

Power Dissipation

2.5W

Drain To Source Breakdown Voltage

100V

Vgsth Max Id

4V @ 250μA

Gate To Source Voltage Vgs

20V

Turn Off Delay Time

36 ns

Contact Plating

Gold

Radyasyon Dayanımı

No

Input Capacitance Ciss Max Vds

2680pF @ 50V

Akım

22A

Current Continuous Drain Id25

7.4A Ta 22A Tc

Terminal Pozisyonu

DUAL

Number Of Elements

1

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fabrika Tedarik Süresi

10 Weeks

Parça Durumu

Active

Genişlik

6mm

ECCN Kodu

EAR99

Drive Voltage Max Rds On Min Rds On

6V 10V

Montaj

Surface Mount

Lifecycle Status

ACTIVE (Last Updated: 3 days ago)

Kurşunsuz

Lead Free

Yükseklik

750μm

Uzunluk

5mm

Power Dissipation Max

2.5W Ta 78W Tc

Fet Type

N-Channel

Rise Time

11ns

Rds On Max Id Vgs

23m Ω @ 7.4A, 10V