FDMC86102LZ

Teknik Özellikler

Kurşunsuz Kodu

yes

Yükseklik

750μm

Gate Charge Qg Max Vgs

22nC @ 10V

Input Capacitance Ciss Max Vds

1290pF @ 50V

Power Dissipation

41W

Drain To Source Breakdown Voltage

100V

Terminal Pozisyonu

DUAL

Rise Time

2.3ns

RoHS Durumu

ROHS3 Compliant

Uzunluk

3.3mm

Fet Type

N-Channel

Reach Svhc

No SVHC

Tepe Reflow Sıcaklığı (°C)

260

Montaj

Surface Mount

Vgsth Max Id

2.2V @ 250μA

Turn Off Delay Time

19 ns

Additional Feature

LOGIC LEVEL COMPATIBLE

Lifecycle Status

ACTIVE (Last Updated: 14 hours ago)

Nominal Vgs

1.6 V

Kılıf / Paket

8-PowerWDFN

Pin Sayısı

8

Genişlik

3.3mm

JESD-609 Kodu

e4

Turn On Delay Time

7.1 ns

Fabrika Tedarik Süresi

6 Weeks

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Yayın Yılı

2017

Seri

PowerTrench®

Element Configuration

Single

Pulsed Drain Currentmax Idm

30A

Operating Mode

ENHANCEMENT MODE

Weight

165.33333mg

Tepe Reflow Süresi (maks. sn)

30

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Jesd30 Code

S-PDSO-N5

Continuous Drain Current Id

7A

Contact Plating

Gold, Silver

Drain Currentmax Abs Id

7A

Gate To Source Voltage Vgs

20V