FDI150N10

Teknik Özellikler

Jesd30 Code

R-PSIP-T3

Gate Charge Qg Max Vgs

69nC @ 10V

Drive Voltage Max Rds On Min Rds On

10V

Drain To Source Breakdown Voltage

100V

Rise Time

164ns

RoHS Durumu

ROHS3 Compliant

Input Capacitance Ciss Max Vds

4760pF @ 25V

Power Dissipation

110W

Continuous Drain Current Id

57A

Operating Mode

ENHANCEMENT MODE

Weight

2.084g

Kurşunsuz Kodu

yes

Lifecycle Status

ACTIVE (Last Updated: 3 days ago)

Vgsth Max Id

4.5V @ 250μA

Turn Off Delay Time

86 ns

Kılıf / Paket

TO-262-3 Long Leads, I2Pak, TO-262AA

Fet Type

N-Channel

Montaj

Through Hole

Gate To Source Voltage Vgs

20V

Çalışma Sıcaklığı

-55°C~150°C TJ

Number Of Elements

1

Radyasyon Dayanımı

No

Parça Durumu

Active

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Turn On Delay Time

47 ns

Fall Time Typ

83 ns

Terminal Sayısı

3

Fabrika Tedarik Süresi

9 Weeks

Pulsed Drain Currentmax Idm

228A

Element Configuration

Single

Current Continuous Drain Id25

57A Tc

Ambalaj

Tube

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Application

SWITCHING

Rds On Max Id Vgs

16m Ω @ 49A, 10V

Vgs Max

±20V

Yayın Yılı

2013

Power Dissipation Max

110W Tc

Montaj Tipi

Through Hole