FDD8882

Teknik Özellikler

Case Connection

DRAIN

Akım Değeri

55A

Fet Type

N-Channel

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Weight

260.37mg

JESD-609 Kodu

e3

Turn Off Delay Time

40 ns

Input Capacitance Ciss Max Vds

1260pF @ 15V

Gate To Source Voltage Vgs

20V

Fall Time Typ

25 ns

Jedec95 Code

TO-252AA

Continuous Drain Current Id

55A

ECCN Kodu

EAR99

Power Dissipation Max

55W Tc

Jesd30 Code

R-PSSO-G2

Current Continuous Drain Id25

12.6A Ta 55A Tc

Yükseklik

2.39mm

RoHS Durumu

ROHS3 Compliant

Çalışma Sıcaklığı

-55°C~175°C TJ

Radyasyon Dayanımı

No

Genişlik

6.22mm

Ambalaj

Tape & Reel (TR)

Transistor Element Material

SILICON

Yayın Yılı

2004

Operating Mode

ENHANCEMENT MODE

Terminal Formu

GULL WING

Transistor Application

SWITCHING

Power Dissipation

55W

Vgs Max

±20V

Seri

PowerTrench®

Drain To Source Breakdown Voltage

30V

Rds On Max Id Vgs

11.5m Ω @ 35A, 10V

Kurşunsuz

Lead Free

Pin Sayısı

3

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Montaj

Surface Mount

Kurşunsuz Kodu

yes

Voltage Rated Dc

30V

Drive Voltage Max Rds On Min Rds On

4.5V 10V