FDD86110

Teknik Özellikler

Jesd30 Code

R-PSSO-G2

Power Dissipation Max

3.1W Ta 127W Tc

Terminal Kaplaması

Tin (Sn)

Çalışma Sıcaklığı

-55°C~150°C TJ

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

12.5A Ta 50A Tc

Yükseklik

2.39mm

Ambalaj

Tape & Reel (TR)

Genişlik

6.22mm

Radyasyon Dayanımı

No

Transistor Application

SWITCHING

Terminal Formu

GULL WING

Pulsed Drain Currentmax Idm

60A

Operating Mode

ENHANCEMENT MODE

Transistor Element Material

SILICON

Threshold Voltage

2.8V

Fet Type

N-Channel

Case Connection

DRAIN

Turn Off Delay Time

19 ns

Input Capacitance Ciss Max Vds

2265pF @ 50V

JESD-609 Kodu

e3

Nominal Vgs

2.8 V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Weight

260.37mg

Parça Durumu

Active

Fall Time Typ

3.9 ns

Gate To Source Voltage Vgs

20V

ECCN Kodu

EAR99

Continuous Drain Current Id

12.5A

Drain Currentmax Abs Id

50A

Vgsth Max Id

4V @ 250μA

Drive Voltage Max Rds On Min Rds On

6V 10V

Uzunluk

6.73mm

Rise Time

5.4ns

Lifecycle Status

ACTIVE (Last Updated: 1 day ago)

Turn On Delay Time

12 ns

Fabrika Tedarik Süresi

8 Weeks

Montaj Tipi

Surface Mount

Reach Svhc

No SVHC

Gate Charge Qg Max Vgs

35nC @ 10V