FDD850N10LD

Teknik Özellikler

Power Dissipation Max

42W Tc

Jesd30 Code

R-PSSO-G4

Yükseklik

2.39mm

Current Continuous Drain Id25

15.3A Tc

RoHS Durumu

RoHS Compliant

Terminal Kaplaması

Tin (Sn)

Çalışma Sıcaklığı

-55°C~150°C TJ

Radyasyon Dayanımı

No

Genişlik

6.22mm

Ambalaj

Tape & Reel (TR)

Transistor Element Material

SILICON

Yayın Yılı

2013

Avalanche Energy Rating Eas

41 mJ

Terminal Formu

GULL WING

Pulsed Drain Currentmax Idm

46A

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Case Connection

DRAIN

Fet Type

N-Channel

Parça Durumu

Obsolete

Nem Hassasiyeti (MSL)

1 (Unlimited)

Weight

260.37mg

JESD-609 Kodu

e3

Input Capacitance Ciss Max Vds

1465pF @ 25V

Turn Off Delay Time

27 ns

Gate To Source Voltage Vgs

20V

Fall Time Typ

8 ns

HTS Kodu

8541.29.00.95

ECCN Kodu

EAR99

Continuous Drain Current Id

15.3A

Uzunluk

6.73mm

Drive Voltage Max Rds On Min Rds On

5V 10V

Vgsth Max Id

2.5V @ 250μA

Lifecycle Status

LAST SHIPMENTS (Last Updated: 1 week ago)

Rise Time

21ns

Drainsource On Resistancemax

0.096Ohm

Gate Charge Qg Max Vgs

28.9nC @ 10V

Montaj Tipi

Surface Mount

Turn On Delay Time

17 ns

Number Of Elements

1