FDD8451

Teknik Özellikler

Radyasyon Dayanımı

No

Genişlik

6.22mm

Ambalaj

Tape & Reel (TR)

Threshold Voltage

2.1V

Transistor Element Material

SILICON

Yayın Yılı

2009

Avalanche Energy Rating Eas

20 mJ

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

78A

Terminal Formu

GULL WING

Transistor Application

SWITCHING

Power Dissipation Max

30W Tc

Jesd30 Code

R-PSSO-G2

Yükseklik

2.39mm

Current Continuous Drain Id25

9A Ta 28A Tc

RoHS Durumu

ROHS3 Compliant

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Kaplaması

Tin (Sn)

Gate To Source Voltage Vgs

20V

Fall Time Typ

2 ns

Drain Currentmax Abs Id

9A

ECCN Kodu

EAR99

Continuous Drain Current Id

28A

Case Connection

DRAIN

Fet Type

N-Channel

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Weight

260.37mg

Nominal Vgs

2.1 V

JESD-609 Kodu

e3

Turn Off Delay Time

19 ns

Input Capacitance Ciss Max Vds

990pF @ 20V

Gate Charge Qg Max Vgs

20nC @ 10V

Reach Svhc

No SVHC

Montaj Tipi

Surface Mount

Fabrika Tedarik Süresi

8 Weeks

Turn On Delay Time

7 ns

Element Configuration

Single

Number Of Elements

1

Terminal Sayısı

2