FDD7N25LZTM

Teknik Özellikler

Fet Type

N-Channel

Case Connection

DRAIN

Turn Off Delay Time

75 ns

Input Capacitance Ciss Max Vds

635pF @ 25V

JESD-609 Kodu

e3

Nem Hassasiyeti (MSL)

1 (Unlimited)

Weight

260.37mg

Parça Durumu

Active

Jedec95 Code

TO-252AA

Fall Time Typ

30 ns

Gate To Source Voltage Vgs

20V

ECCN Kodu

EAR99

Continuous Drain Current Id

6.2A

Direnç

550MOhm

Jesd30 Code

R-PSSO-G2

Power Dissipation Max

56W Tc

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Kaplaması

Tin (Sn)

RoHS Durumu

ROHS3 Compliant

Yükseklik

2.39mm

Current Continuous Drain Id25

6.2A Tc

Genişlik

6.22mm

Ambalaj

Tape & Reel (TR)

Radyasyon Dayanımı

No

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

25A

Terminal Formu

GULL WING

Yayın Yılı

2017

Transistor Element Material

SILICON

Power Dissipation

56W

Vgs Max

±20V

Seri

UniFET™

Rds On Max Id Vgs

550m Ω @ 3.1A, 10V

Drain To Source Breakdown Voltage

250V

Montaj

Surface Mount

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Pin Sayısı

3

Kurşunsuz

Lead Free

Kurşunsuz Kodu

yes