FDD7N20TM

Teknik Özellikler

Fabrika Tedarik Süresi

4 Weeks

Turn On Delay Time

9 ns

Gate Charge Qg Max Vgs

6.7nC @ 10V

Reach Svhc

No SVHC

Montaj Tipi

Surface Mount

Terminal Sayısı

2

Contact Plating

Tin

Number Of Elements

1

Element Configuration

Single

Drive Voltage Max Rds On Min Rds On

10V

Uzunluk

6.73mm

Vgsth Max Id

5V @ 250μA

Rise Time

30ns

Lifecycle Status

ACTIVE (Last Updated: 22 hours ago)

Pin Sayısı

3

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Montaj

Surface Mount

Kurşunsuz

Lead Free

Kurşunsuz Kodu

yes

Seri

UniFET™

Vgs Max

±30V

Power Dissipation

43W

Drain To Source Breakdown Voltage

200V

Rds On Max Id Vgs

690m Ω @ 2.5A, 10V

Radyasyon Dayanımı

No

Genişlik

6.22mm

Ambalaj

Tape & Reel (TR)

Yayın Yılı

2004

Avalanche Energy Rating Eas

62.5 mJ

Operating Mode

ENHANCEMENT MODE

Terminal Formu

GULL WING

Transistor Application

SWITCHING

Threshold Voltage

5V

Transistor Element Material

SILICON

Direnç

690mOhm

Power Dissipation Max

43W Tc

Jesd30 Code

R-PSSO-G2

Çalışma Sıcaklığı

-55°C~150°C TJ

Yükseklik

2.39mm

Current Continuous Drain Id25

5A Tc