FDD6N50FTM

Teknik Özellikler

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Weight

260.37mg

JESD-609 Kodu

e3

Input Capacitance Ciss Max Vds

960pF @ 25V

Turn Off Delay Time

33.4 ns

Case Connection

DRAIN

Fet Type

N-Channel

Continuous Drain Current Id

5.5A

ECCN Kodu

EAR99

Gate To Source Voltage Vgs

30V

Fall Time Typ

20.5 ns

Jedec95 Code

TO-252AA

Current Continuous Drain Id25

5.5A Tc

Yükseklik

2.39mm

RoHS Durumu

ROHS3 Compliant

Terminal Kaplaması

Tin (Sn)

Çalışma Sıcaklığı

-55°C~150°C TJ

Power Dissipation Max

89W Tc

Jesd30 Code

R-PSSO-G2

Direnç

1.15Ohm

Transistor Element Material

SILICON

Yayın Yılı

2013

Avalanche Energy Rating Eas

270 mJ

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

22A

Terminal Formu

GULL WING

Transistor Application

SWITCHING

Radyasyon Dayanımı

No

Genişlik

6.22mm

Ambalaj

Tape & Reel (TR)

Drain To Source Breakdown Voltage

500V

Rds On Max Id Vgs

1.15 Ω @ 2.75A, 10V

Power Dissipation

89W

Vgs Max

±30V

Seri

UniFET™

Feedback Capmax Crss

9.5 pF

Kurşunsuz Kodu

yes

Kurşunsuz

Lead Free

Pin Sayısı

3