FDD6N20TM

Teknik Özellikler

Radyasyon Dayanımı

No

Fabrika Tedarik Süresi

4 Weeks

Turn On Delay Time

8.3 ns

Ambalaj

Tape & Reel (TR)

Gate Charge Qg Max Vgs

6.1nC @ 10V

Reach Svhc

No SVHC

Montaj Tipi

Surface Mount

Avalanche Energy Rating Eas

60 mJ

Terminal Sayısı

2

Terminal Formu

GULL WING

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Contact Plating

Tin

Threshold Voltage

5V

Transistor Element Material

SILICON

Element Configuration

Single

Number Of Elements

1

Drive Voltage Max Rds On Min Rds On

10V

Vgsth Max Id

5V @ 250μA

Direnç

800mOhm

Power Dissipation Max

40W Tc

Jesd30 Code

R-PSSO-G2

Çalışma Sıcaklığı

-55°C~150°C TJ

Rise Time

5.6ns

Current Continuous Drain Id25

4.5A Tc

Lifecycle Status

ACTIVE (Last Updated: 19 hours ago)

RoHS Durumu

ROHS3 Compliant

Fall Time Typ

12.8 ns

Pin Sayısı

3

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Montaj

Surface Mount

Gate To Source Voltage Vgs

30V

Kurşunsuz

Lead Free

ECCN Kodu

EAR99

Continuous Drain Current Id

4.5A

Kurşunsuz Kodu

yes

Fet Type

N-Channel

Seri

UniFET™

Vgs Max

±30V

Power Dissipation

40W