FDD6680AS

Teknik Özellikler

Terminal

SMD/SMT

Case Connection

DRAIN

Fet Type

N-Channel

Akım Değeri

55A

Nominal Vgs

1.4 V

Parça Durumu

Active

Weight

260.37mg

Nem Hassasiyeti (MSL)

1 (Unlimited)

Turn Off Delay Time

28 ns

Input Capacitance Ciss Max Vds

1200pF @ 15V

JESD-609 Kodu

e3

Gate To Source Voltage Vgs

20V

Fall Time Typ

12 ns

Continuous Drain Current Id

55A

ECCN Kodu

EAR99

Jesd30 Code

R-PSSO-G2

Power Dissipation Max

60W Ta

Yükseklik

2.39mm

Current Continuous Drain Id25

55A Ta

RoHS Durumu

ROHS3 Compliant

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Kaplaması

Tin (Sn)

Genişlik

6.22mm

Ambalaj

Tape & Reel (TR)

Radyasyon Dayanımı

No

Transistor Element Material

SILICON

Threshold Voltage

1.4V

Operating Mode

ENHANCEMENT MODE

Terminal Formu

GULL WING

Transistor Application

SWITCHING

Avalanche Energy Rating Eas

205 mJ

Yayın Yılı

2004

Seri

PowerTrench®, SyncFET™

Vgs Max

±20V

Power Dissipation

60mW

Rds On Max Id Vgs

10.5m Ω @ 12.5A, 10V

Drain To Source Breakdown Voltage

30V

Kurşunsuz

Lead Free

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Montaj

Surface Mount